JANSR2N3019
TRANS NPN 80V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N3019 is a military-grade NPN bipolar junction transistor (BJT) packaged in a TO-5AA metal can. This through-hole component offers a 80V collector-emitter breakdown voltage and a maximum collector current of 1A. It features a minimum DC current gain (hFE) of 50 at 500mA and 10V, with a Vce saturation of 500mV at 50mA and 500mA. The device is rated for 800mW maximum power dissipation and operates across a temperature range of -65°C to 200°C. Qualified to MIL-PRF-19500/391, the JANSR2N3019 is suitable for applications in aerospace, defense, and industrial control systems requiring high reliability.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/391 |