JANSR2N2907AUB
TRANS PNP 60V 0.6A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSR2N2907AUB is a PNP bipolar junction transistor designed for demanding applications. This hermetically sealed, military-grade device, specified under MIL-PRF-19500/291, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA. It features a maximum power dissipation of 500mW and a typical DC current gain (hFE) of 100 at 1mA collector current and 10V collector-emitter voltage. The saturation voltage is specified at 1.6V maximum for a collector current of 500mA driven by 50mA base current. Operating across a wide temperature range of -65°C to 200°C, this surface-mount transistor utilizes a 3-SMD, No Lead (UB) package, supplied in bulk. Its robust construction and performance characteristics make it suitable for use in aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |