JANSR2N2907AUA
TRANS PNP 60V 0.6A UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2907AUA is a high-reliability PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/291, features a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA. Its surface mount UA package (4-SMD, No Lead) is suitable for compact designs, while the 500mW power dissipation capability ensures robust performance. With a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a saturation voltage of 1.6V at 50mA/500mA, this transistor offers efficient switching and amplification. The JANSR2N2907AUA operates across a wide temperature range of -65°C to 200°C, making it ideal for aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |