JANSR2N2907AL
TRANS PNP 60V 0.6A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2907AL is a PNP bipolar junction transistor (BJT) with a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA. This device features a maximum power dissipation of 500mW and a low collector cutoff current of 50nA. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage, with a Vce(sat) of 1.6V at 50mA base current and 500mA collector current. Designed for demanding applications, this transistor boasts a military grade qualification (MIL-PRF-19500/291) and operates across a wide temperature range from -65°C to 200°C. The JANSR2N2907AL is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. This component is frequently utilized in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
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