JANSR2N2907A
TRANS PNP 60V 0.6A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2907A is a PNP bipolar junction transistor (BJT) qualified to MIL-PRF-19500/291 standards. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA. It offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor is packaged in a TO-18 (TO-206AA) metal can with a through-hole mounting type. With a maximum power dissipation of 500mW and an extended operating temperature range of -65°C to 200°C, this component is suitable for demanding applications in aerospace, defense, and industrial sectors. The saturation voltage (Vce Sat) is specified as 1.6V maximum at 50mA base current and 500mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
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