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JANSR2N2906AUBC

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JANSR2N2906AUBC

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Microchip Technology JANSR2N2906AUBC is a military-grade PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This surface-mount device, packaged in an UBC configuration, offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. It features a power dissipation of 500mW and a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor exhibits a collector cutoff current of 50nA and a Vce saturation of 1.6V at 50mA collector current. Operating across a wide temperature range from -65°C to 200°C, this component is qualified under MIL-PRF-19500/291, making it suitable for aerospace and defense systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUBC
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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