JANSR2N2906AUA/TR
TRANS PNP 60V 0.6A UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2906AUA-TR is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This device features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 600mA, with a maximum power dissipation of 500mW. It offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor is housed in a 4-SMD, No Lead UA package, suitable for surface mount applications and supplied on tape and reel. Its military grade and MIL-PRF-19500/291 qualification underscore its suitability for demanding environments. This component finds application in aerospace, defense, and industrial systems requiring robust performance and extended temperature operation from -65°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |