JANSR2N2906AUA
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSR2N2906AUA is a PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a 60V collector-emitter breakdown voltage and can handle a maximum collector current of 600mA. With a power dissipation rating of 500mW, it is suitable for surface mount applications requiring robust performance. The transistor exhibits a minimum DC current gain (hFE) of 40 at 150mA and 10V. It operates across a wide temperature range from -65°C to 200°C, making it ideal for military-grade specifications, including MIL-PRF-19500/291 qualification. The UA package is a 4-SMD, No Lead configuration. This component is commonly utilized in aerospace, defense, and industrial systems where reliability under extreme conditions is paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |