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JANSR2N2906AL

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JANSR2N2906AL

TRANS PNP 60V 0.6A TO18

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Microchip Technology JANSR2N2906AL is a PNP bipolar junction transistor designed for demanding applications. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 600mA. With a power dissipation of 500mW, it offers robust performance in its TO-18 (TO-206AA) metal can package. The JANSR2N2906AL boasts a minimum DC current gain (hFE) of 40 at 150mA and 10V, and a Vce(sat) of 1.6V at 50mA/500mA. Its military-grade qualification under MIL-PRF-19500/291 and an extended operating temperature range of -65°C to 200°C make it suitable for aerospace, defense, and industrial systems requiring high reliability and performance.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-18
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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