JANSR2N2906A
TRANS PNP 60V 0.6A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSR2N2906A is a military-grade PNP bipolar junction transistor (BJT) qualified to MIL-PRF-19500/291. This component features a collector-emitter breakdown voltage of 60 V and a maximum collector current of 600 mA. With a power dissipation of 500 mW, it is packaged in a TO-18 (TO-206AA) metal can, suitable for through-hole mounting. The transistor exhibits a minimum DC current gain (hFE) of 40 at 150 mA and 10 V. It is designed for operation across an extended temperature range of -65°C to 200°C, making it suitable for demanding applications in aerospace and defense sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
Request a Quote
Clients Also Buy
2N3780
POWER BJT
2N2481
NPN TRANSISTOR
JANTX2N6353
TRANS NPN DARL 150V 5A TO66
