JANSR2N2905AL
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSR2N2905AL is a PNP bipolar junction transistor (BJT) designed for demanding applications requiring high reliability and performance. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a collector-emitter breakdown voltage of 60 V and a maximum collector current of 600 mA. With a power dissipation rating of 600 mW and a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, it is suitable for general-purpose amplification and switching. The JANSR2N2905AL meets MIL-PRF-19500/290 qualification and operates across a wide temperature range of -65°C to 200°C, making it ideal for military and aerospace applications. The part exhibits a Vce(sat) of 1.6 V at 50 mA/500 mA and a collector cutoff current of 1 µA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 600 mW |
| Qualification | MIL-PRF-19500/290 |