JANSR2N2905A
TRANS PNP 60V 1UA TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2905A is a military-grade PNP bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This through-hole component is qualified to MIL-PRF-19500/290, ensuring high reliability for demanding applications. It features a collector-emitter breakdown voltage (Vce) of 60 V and a maximum continuous collector current (Ic) of 600 mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. Its maximum power dissipation is 800 mW. The collector cutoff current (Icbo) is specified at a maximum of 1 µA. The saturation voltage (Vce(sat)) is 1.6 V at 50 mA collector current and 50 mA base current. This component finds use in military and aerospace applications requiring robust and reliable switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/290 |
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