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JANSR2N2904AL

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JANSR2N2904AL

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSR2N2904AL is a PNP bipolar junction transistor. This military-grade component, conforming to MIL-PRF-19500/290, features a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA. It offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor is packaged in a TO-205AA (TO-5AA) metal can for through-hole mounting, with a maximum power dissipation of 600mW. Operating temperature range is -65°C to 200°C. This device is suitable for applications requiring robust performance in demanding environments, commonly found in aerospace and defense systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max600 mW
QualificationMIL-PRF-19500/290

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