JANSR2N2904AL
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2904AL is a PNP bipolar junction transistor. This military-grade component, conforming to MIL-PRF-19500/290, features a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA. It offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor is packaged in a TO-205AA (TO-5AA) metal can for through-hole mounting, with a maximum power dissipation of 600mW. Operating temperature range is -65°C to 200°C. This device is suitable for applications requiring robust performance in demanding environments, commonly found in aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 600 mW |
| Qualification | MIL-PRF-19500/290 |