Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

JANSR2N2904A

Banner
productimage

JANSR2N2904A

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSR2N2904A is a military-grade PNP bipolar junction transistor. This through-hole component, packaged in a TO-39 (TO-205AD) metal can, offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. With a power dissipation of 600mW and an operating temperature range from -65°C to 200°C, it is suitable for demanding applications. Key parameters include a minimum DC current gain (hFE) of 40 at 150mA and 10V, and a Vce saturation of 1.6V at 50mA and 500mA. The part meets MIL-PRF-19500/290 qualification. It finds application in aerospace, defense, and industrial sectors requiring robust transistor performance.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max600 mW
QualificationMIL-PRF-19500/290

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
2N3780

POWER BJT

product image
2N2481

NPN TRANSISTOR

product image
JANTX2N6353

TRANS NPN DARL 150V 5A TO66