JANSR2N2369AUB
TRANS NPN 15V UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2369AUB is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This component features a collector-emitter breakdown voltage of 15V and a maximum power dissipation of 360mW. It is specified with a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage. The transistor exhibits a Vce saturation of 450mV at 10mA base current and 100mA collector current. Operating with a collector cutoff current of 400nA (max), the JANSR2N2369AUB is qualified to MIL-PRF-19500/317, indicating its suitability for military-grade requirements. The device is housed in a 3-SMD, No Lead UB package, enabling surface mount assembly. Its operating temperature range extends from -65°C to 200°C (TJ). This transistor finds application in various military and aerospace electronic systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/317 |
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