JANSR2N2369AUA
TRANS NPN 15V UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2369AUA is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 360 mW. It offers a minimum DC current gain (hFE) of 20 at 100mA and 1V. The transistor exhibits a Vce saturation of 450mV at 10mA and 100mA, with a collector cutoff current (Icbo) of 400nA. Manufactured to military specifications (MIL-PRF-19500/317), this device is qualified for use in harsh environments with an operating temperature range of -65°C to 200°C. The JANSR2N2369AUA is presented in a 4-SMD, No Lead package, suitable for surface mounting and supplied in bulk. Its characteristics make it suitable for various military and industrial applications requiring reliable amplification and switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/317 |