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JANSR2N2369AU

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JANSR2N2369AU

RH DUAL - SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSR2N2369AU is a high-reliability, NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified under MIL-PRF-19500/317, offers a collector-emitter breakdown voltage of 15V and a maximum power dissipation of 500mW. Featuring a surface mount U package (6-SMD, No Lead) and available in bulk packaging, it operates across a wide temperature range from -65°C to 200°C. With a minimum DC current gain (hFE) of 40 at 10mA and 1V, and a Vce saturation of 450mV at 10mA and 100mA, it is suitable for switching and amplification circuits in aerospace, defense, and other high-reliability electronic systems. The collector cutoff current is a maximum of 400nA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageU
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max500 mW
QualificationMIL-PRF-19500/317

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