JANSR2N2369AU
RH DUAL - SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSR2N2369AU is a high-reliability, NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified under MIL-PRF-19500/317, offers a collector-emitter breakdown voltage of 15V and a maximum power dissipation of 500mW. Featuring a surface mount U package (6-SMD, No Lead) and available in bulk packaging, it operates across a wide temperature range from -65°C to 200°C. With a minimum DC current gain (hFE) of 40 at 10mA and 1V, and a Vce saturation of 450mV at 10mA and 100mA, it is suitable for switching and amplification circuits in aerospace, defense, and other high-reliability electronic systems. The collector cutoff current is a maximum of 400nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | U |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/317 |