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JANSR2N2369A

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JANSR2N2369A

TRANS NPN 15V TO18

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSR2N2369A is a military-grade NPN bipolar junction transistor. This TO-18 packaged device offers a 15V collector-emitter breakdown voltage (Vceo) and a maximum power dissipation of 360mW. It features a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage, with a Vce(sat) of 450mV at 10mA base current and 100mA collector current. The collector cutoff current is a maximum of 400nA. Qualified to MIL-PRF-19500/317, this transistor is designed for operation across a wide temperature range of -65°C to 200°C. It is commonly utilized in aerospace, defense, and industrial applications requiring high reliability and robust performance. This component is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA, 1V
Frequency - Transition-
Supplier Device PackageTO-18
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max360 mW
QualificationMIL-PRF-19500/317

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