JANSR2N2222AUB
TRANS NPN 50V 0.8A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSR2N2222AUB is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/255, features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a minimum DC current gain (hFE) of 100 at 150mA and 10V, it offers robust amplification characteristics. The transistor is packaged in an UB (3-SMD, No Lead) surface-mount configuration, dissipating up to 500mW. Its wide operating temperature range of -65°C to 200°C makes it suitable for aerospace, defense, and industrial control systems requiring extreme environmental performance. The Vce saturation is specified at 1V maximum for 50mA base current and 500mA collector current, with a collector cutoff current of 50nA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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