JANSR2N2222AUA
TRANS NPN 50V 0.8A UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2222AUA is a bipolar junction transistor (BJT) with an NPN configuration. This surface mount device, packaged as UA (4-SMD, No Lead), offers a maximum collector current of 800 mA and a collector-emitter breakdown voltage of 50 V. It features a power dissipation of 650 mW and a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. The saturation voltage (Vce Sat) is a maximum of 1 V at 50 mA and 500 mA. Operating across an extended temperature range of -65°C to 200°C, this component is qualified to MIL-PRF-19500/255, indicating its suitability for demanding military applications. It finds use in various defense and aerospace electronic systems requiring robust transistor performance.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |
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