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JANSR2N2221AL

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JANSR2N2221AL

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSR2N2221AL is an NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-18 (TO-206AA) metal can package, offers a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 800mA. It features a maximum power dissipation of 500mW and a saturation voltage of 1V at 50mA collector current and 5mA base current. The device exhibits a minimum DC current gain (hFE) of 40 at 150mA collector current and 10V collector-emitter voltage. Qualified to MIL-PRF-19500/255, this military-grade transistor operates across a wide temperature range of -65°C to 200°C. It is commonly found in aerospace, defense, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
QualificationMIL-PRF-19500/255

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