JANSR2N2221A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2221A is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 800 mA. With a power dissipation capability of 500 mW, it is suitable for moderate power switching and amplification tasks. The minimum DC current gain (hFE) is specified at 40 at 150 mA collector current and 10 V collector-emitter voltage. The transistor exhibits a saturation voltage (Vce(sat)) of 1 V at 50 mA base current and 500 mA collector current, with a collector cutoff current (Icbo) of 50 nA. It is housed in a TO-18 (TO-206AA) metal can package, facilitating through-hole mounting. This device operates across a wide temperature range of -65°C to 200°C and carries MIL-PRF-19500/255 qualification, indicating its suitability for military and high-reliability applications. It is commonly utilized in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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