JANSR2N2219A
TRANS NPN 50V 0.8A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSR2N2219A is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA, with a power dissipation of 800mW. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. It operates within an extended temperature range of -55°C to 200°C. The JANSR2N2219A is packaged in a TO-39 (TO-205AD) metal can with through-hole mounting. This device meets the stringent requirements of MIL-PRF-19500/251 qualification, making it suitable for military and aerospace applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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