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JANSR2N2218AL

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JANSR2N2218AL

TRANS NPN 50V 0.8A TO5

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Microchip Technology JANSR2N2218AL is a military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 800mA. With a power dissipation rating of 800mW and a wide operating temperature range of -65°C to 200°C, it is suitable for use in aerospace and defense systems. Key parameters include a minimum DC current gain (hFE) of 35 at 1mA and 10V, and a collector cutoff current of 10nA. This device meets the stringent requirements of MIL-PRF-19500/251 qualification.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 1mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW
QualificationMIL-PRF-19500/251

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