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JANSR2N2218A

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JANSR2N2218A

TRANS NPN 50V 0.8A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSR2N2218A is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This through-hole component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA, with a maximum power dissipation of 800mW. Key parameters include a minimum DC current gain (hFE) of 40 at 150mA and 10V, and a collector cutoff current of 10nA. The saturation voltage (Vce(sat)) is specified at 1V maximum for a base current of 50mA driving a collector current of 500mA. Qualified to MIL-PRF-19500/251, this device operates across a wide temperature range of -65°C to 200°C. It finds application in demanding military and aerospace systems requiring robust performance and reliability.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW
QualificationMIL-PRF-19500/251

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