JANSR2N2218A
TRANS NPN 50V 0.8A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSR2N2218A is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This through-hole component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA, with a maximum power dissipation of 800mW. Key parameters include a minimum DC current gain (hFE) of 40 at 150mA and 10V, and a collector cutoff current of 10nA. The saturation voltage (Vce(sat)) is specified at 1V maximum for a base current of 50mA driving a collector current of 500mA. Qualified to MIL-PRF-19500/251, this device operates across a wide temperature range of -65°C to 200°C. It finds application in demanding military and aerospace systems requiring robust performance and reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |