JANSP2N4449
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSP2N4449 is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-46 metal can package. This through-hole component features a maximum collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 500 mW. It exhibits a DC current gain (hFE) of at least 20 at 100mA collector current and 1V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 450mV at 10mA base current and 100mA collector current. The collector cutoff current (Icbo) is specified at a maximum of 400nA. This device meets MIL-PRF-19500/317 qualification and operates across a wide temperature range of -65°C to 200°C. It is commonly utilized in aerospace, defense, and high-reliability industrial applications requiring robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/317 |
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