JANSP2N3700
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANSP2N3700 is an NPN bipolar junction transistor (BJT) designed for demanding applications requiring robust performance. This through-hole component, housed in a TO-18 (TO-206AA) metal can package, offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 1A. With a maximum power dissipation of 500mW, it is suitable for general-purpose amplification and switching tasks. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce(sat) of 500mV at 500mA collector current and 50mA base current. Operating across a wide temperature range of -65°C to 200°C, this MIL-PRF-19500/391 qualified component is employed in aerospace, defense, and industrial sectors where reliability is paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
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