JANSP2N3637UB/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N3637UB-TR is a PNP bipolar junction transistor (BJT) designed for high-temperature and demanding applications. This military-grade component, qualified to MIL-PRF-19500/357, offers robust performance with a collector-emitter breakdown voltage of 175V and a continuous collector current capability of 1A. It features a maximum power dissipation of 1W and a saturation voltage of 600mV at 5mA base current and 50mA collector current. The minimum DC current gain (hFE) is 100 at 50mA collector current and 10V collector-emitter voltage, with a low collector cutoff current of 10µA. The JANSP2N3637UB-TR is provided in a UB package for surface mounting and operates within an extended temperature range of -65°C to 200°C. This device is frequently utilized in aerospace, defense, and industrial control systems requiring reliable, high-performance switching and amplification. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |