JANSP2N3637L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANSP2N3637L is a PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a high collector-emitter breakdown voltage of 175 V and a continuous collector current capability of 1 A. It features a maximum power dissipation of 1 W and a saturation voltage of 600 mV at 5 mA base current and 50 mA collector current. The device exhibits a minimum DC current gain (hFE) of 100 at 50 mA collector current and 10 V collector-emitter voltage. With a military grade qualification under MIL-PRF-19500/357 and an operating temperature range of -65°C to 200°C, the JANSP2N3637L is suitable for applications in aerospace and defense.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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