JANSP2N3637
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N3637 is a PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a collector-emitter breakdown voltage of 175V and a continuous collector current rating of 1A. With a maximum power dissipation of 1W and a low collector cutoff current of 10µA, it is suitable for high-reliability environments. The DC current gain (hFE) is a minimum of 100 at 50mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 600mV at 5mA base current and 50mA collector current. This device is qualified to MIL-PRF-19500/357, indicating its suitability for military and aerospace applications. The operating temperature range is -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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