JANSP2N3635UB
TRANS PNP 140V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N3635UB is a bipolar junction transistor (BJT) of PNP type. This military-grade component, qualified to MIL-PRF-19500/357, offers a collector-emitter breakdown voltage of 140V and a continuous collector current capability of 1A. With a maximum power dissipation of 1.5W, it features a minimum DC current gain (hFE) of 100 at 10mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 600mV for 5mA base current and 50mA collector current. The transistor exhibits a maximum collector cutoff current of 10µA and operates across a temperature range of -65°C to 200°C. Packaged in a 4-SMD, No Lead (UB) configuration, this device is suitable for applications in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1.5 W |
| Qualification | MIL-PRF-19500/357 |
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