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JANSP2N3635

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JANSP2N3635

TRANS PNP 140V 1A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSP2N3635 is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a maximum collector-emitter breakdown voltage of 140V and a continuous collector current capability of 1A. It features a power dissipation of 1W and a minimum DC current gain (hFE) of 100 at 50mA collector current and 10V collector-emitter voltage. The transistor exhibits a Vce(sat) of 600mV at 5mA base current and 50mA collector current. With a collector cutoff current of 10µA, it is suitable for operation across a wide temperature range from -65°C to 200°C. This component meets the MIL-PRF-19500/357 qualification, indicating its suitability for demanding military and aerospace systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max1 W
QualificationMIL-PRF-19500/357

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