JANSP2N3501UB/TR
TRANS NPN 150V 0.3A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N3501UB-TR is a military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 150V and a continuous collector current capability of 300mA. With a maximum power dissipation of 500mW and a wide operating temperature range of -65°C to 200°C, it offers robust performance in harsh environments. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA/10V and a Vce(sat) of 400mV at 15mA/150mA. This transistor, manufactured to MIL-PRF-19500/366 qualification standards, is supplied in a UB package for surface mounting and is delivered on tape and reel (TR). Its specifications make it suitable for use in aerospace, defense, and industrial control systems requiring reliable switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/366 |
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