JANSP2N3501L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N3501L is a military-grade NPN bipolar junction transistor (BJT) packaged in a TO-205AA (TO-5AA) metal can. This through-hole component offers a collector-emitter breakdown voltage of 150V and a maximum collector current of 300mA. It dissipates up to 1W of power and features a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor exhibits a Vce saturation of 400mV at 15mA base current and 150mA collector current. Designed for demanding applications, it operates across a wide temperature range of -65°C to 200°C and meets MIL-PRF-19500/366 qualification standards. This component is utilized in aerospace, defense, and other high-reliability electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |