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JANSP2N3500L

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JANSP2N3500L

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSP2N3500L is an NPN bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-205AA (TO-5AA) metal can package, offers a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 300 mA. Key parameters include a maximum power dissipation of 1 W and a saturation voltage of 400 mV at 15 mA base current and 150 mA collector current. The DC current gain (hFE) is specified at a minimum of 40 at 150 mA collector current and 10 V collector-emitter voltage. Operating across an extended temperature range of -65°C to 200°C, this device meets MIL-PRF-19500/366 qualification, making it suitable for military and aerospace applications. The JANSP2N3500L is also utilized in industrial control and high-reliability power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max1 W
QualificationMIL-PRF-19500/366

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