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JANSP2N3057A

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JANSP2N3057A

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Microchip Technology JANSP2N3057A is an NPN bipolar junction transistor (BJT) designed for demanding applications requiring robust performance and high reliability. This military-grade component, qualified to MIL-PRF-19500/391, features a breakdown voltage of 80V and a continuous collector current rating of 1A. With a maximum power dissipation of 500mW and a saturation voltage of 500mV at 500mA collector current, it offers efficient operation in its intended use cases. The TO-46 metal can package facilitates through-hole mounting, suitable for traditional PCB assembly. This device is commonly employed in aerospace, defense, and industrial control systems where consistent performance under extreme temperature conditions, ranging from -65°C to 200°C, is critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AB, TO-46-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-46
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max500 mW
QualificationMIL-PRF-19500/391

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