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JANSP2N2907AUBC

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JANSP2N2907AUBC

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSP2N2907AUBC is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This surface-mount device, packaged in a 3-SMD, No Lead configuration (UBC), offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA. With a maximum power dissipation of 500mW, it features a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. The operating temperature range is -65°C to 200°C, reflecting its military-grade qualification under MIL-PRF-19500/291. This component is suitable for demanding environments in aerospace, defense, and industrial sectors requiring robust performance.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUBC
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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