JANSP2N2907A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSP2N2907A is a high-reliability PNP bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-18 (TO-206AA) metal can package, offers a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA. With a power dissipation of 500mW and a broad operating temperature range of -65°C to 200°C, it is suitable for military and aerospace environments. The JANSP2N2907A meets MIL-PRF-19500/291 qualification standards, ensuring robust performance. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce(sat) of 1.6V at 50mA collector current. This device is frequently utilized in power supply regulation and signal amplification circuits within defense and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
Request a Quote
Clients Also Buy
2N3440U4
TRANS NPN 250V 1A U4
JANS2N5151U3
POWER BJT
JANSM2N5154L
RH POWER BJT
