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JANSP2N2906AUB

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JANSP2N2906AUB

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSP2N2906AUB is a PNP bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/291, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 600mA. It features a minimum DC current gain (hFE) of 40 at 150mA and 10V, with a saturation voltage of 1.6V at 50mA collector current and 500mA base current. The device dissipates a maximum of 500mW and operates reliably across a wide temperature range of -65°C to 200°C. Packaged in a 3-SMD, No Lead (UB) surface-mount configuration, this transistor is suitable for use in aerospace, defense, and industrial control systems requiring high reliability and performance.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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