JANSP2N2906AUA
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSP2N2906AUA is a PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA, with a power dissipation capability of 500mW. The JANSP2N2906AUA is housed in a 4-SMD, No Lead (UA) surface-mount package, suitable for high-density circuitry. It offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. The operating temperature range is -65°C to 200°C, and it meets MIL-PRF-19500/291 qualification, indicating its suitability for military and aerospace applications. This transistor is commonly utilized in power switching, amplification, and general-purpose discrete applications where robust performance and temperature stability are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |