JANSP2N2906A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N2906A is a military-grade PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA, with a power dissipation rating of 500mW. It offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. With an operating temperature range of -65°C to 200°C and MIL-PRF-19500/291 qualification, it is ideal for use in aerospace, defense, and industrial control systems where reliability under extreme conditions is paramount. The device exhibits a Vce(sat) of 1.6V maximum at 50mA base current and 500mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |