JANSP2N2369AUBC/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSP2N2369AUBC-TR is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This surface mount component, packaged in a compact UBC (3-SMD, No Lead) format, offers a collector-emitter breakdown voltage of 15V and a maximum power dissipation of 360mW. It features a robust operational temperature range of -65°C to 200°C (TJ), making it suitable for harsh environments. The transistor exhibits a minimum DC current gain (hFE) of 20 at 100mA collector current and 1V collector-emitter voltage, with a Vce (sat) of 450mV at 10mA base current and 100mA collector current. The collector cutoff current is specified at a maximum of 400nA. This device is commonly utilized in industrial, military, and aerospace sectors for switching and amplification functions. Supplied on tape and reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UBC |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |
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