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JANSP2N2369AUBC

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JANSP2N2369AUBC

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's JANSP2N2369AUBC is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This surface-mount device, packaged as UBC (3-SMD, No Lead), offers a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 360 mW. Key electrical characteristics include a low collector cutoff current of 400 nA (max) and a minimum DC current gain (hFE) of 20 at 100 mA collector current and 1 V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at 450 mV maximum for a base current of 10 mA and a collector current of 100 mA. Operating across an extended temperature range of -65°C to 200°C (TJ), this component is suitable for demanding environments in aerospace, defense, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA, 1V
Frequency - Transition-
Supplier Device PackageUBC
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max360 mW

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