JANSP2N2369AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N2369AUB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount component, packaged in a 3-SMD, No Lead (UB) configuration, offers a collector-emitter breakdown voltage of 20 V and a maximum power dissipation of 400 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V collector-emitter voltage, with a Vce(sat) of 450mV at 10mA base current and 100mA collector current. The device exhibits a low collector cutoff current of 400nA (max). Qualified to MIL-PRF-19500/317, this transistor is suitable for use in military and defense systems, as well as aerospace and industrial electronics where high reliability and performance are critical. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 400 mW |
| Qualification | MIL-PRF-19500/317 |