JANSP2N2369AUA
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N2369AUA is a high-reliability, NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, packaged in a 4-SMD, No Lead (UA) configuration, offers a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 500 mW. It features a guaranteed minimum DC current gain (hFE) of 40 at 10mA collector current and 1V collector-emitter voltage. The transistor exhibits a low collector cutoff current of 400nA (max) and a Vce saturation of 450mV (max) at 10mA base current and 100mA collector current. Qualified to MIL-PRF-19500/317 for military applications, it operates reliably across a wide temperature range of -65°C to 200°C. This component is suitable for use in various military and aerospace systems, as well as high-performance industrial electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/317 |