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JANSP2N2369A

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JANSP2N2369A

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSP2N2369A is an NPN bipolar junction transistor (BJT) designed for rigorous applications requiring military-grade performance. This through-hole component, packaged in a TO-18 (TO-206AA) metal can, offers a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 500 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V collector-emitter voltage, and a saturation voltage (Vce Sat) of 450mV at 10mA base current and 100mA collector current. The device exhibits a low collector cutoff current of 400nA. Qualified to MIL-PRF-19500/317, this transistor is suitable for demanding environments and applications within aerospace, defense, and other high-reliability sectors. It operates across a wide temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max500 mW
QualificationMIL-PRF-19500/317

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