JANSP2N2222AUBC/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSP2N2222AUBC-TR is an NPN bipolar junction transistor (BJT) designed for demanding applications. This MIL-PRF-19500/255 qualified device offers a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of 800 mA, with a maximum power dissipation of 500 mW. Its DC current gain (hFE) is a minimum of 100 at 150 mA and 10 V. The transistor features a low saturation voltage of 1 V at 50 mA collector current and 500 mA base current. Operating across an extended temperature range of -65°C to 200°C, this surface mount component is housed in a 3-SMD, No Lead (UBC) package and supplied on tape and reel. Its robust specifications make it suitable for use in military and aerospace systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UBC |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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