JANSP2N2222AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N2222AUB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount component offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 800mA, with a power dissipation rating of 500mW. It features a typical DC current gain (hFE) of 100 at 150mA and 10V. The device operates within an extended temperature range of -65°C to 200°C (TJ) and meets MIL-PRF-19500/255 qualification, indicating its suitability for military-grade performance. The UB package, a 3-SMD, No Lead configuration, is provided in bulk packaging. This transistor is commonly utilized in aerospace, defense, and industrial control systems requiring high reliability and robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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