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JANSP2N2221AUB

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JANSP2N2221AUB

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSP2N2221AUB is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, packaged in a 3-SMD, No Lead (UB) configuration, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. With a power dissipation of 500mW, it features a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor exhibits a Vce(sat) of 1V at 50mA/500mA and a collector cutoff current of 50nA. Operating across a wide temperature range of -65°C to 200°C, this MIL-PRF-19500/255 qualified component is suitable for use in aerospace and defense systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
QualificationMIL-PRF-19500/255

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