JANSP2N2221AUA
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSP2N2221AUA is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This surface mount device, packaged in a UA (4-SMD, No Lead) configuration, features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 800 mA. With a power dissipation of 650 mW and a minimum DC current gain (hFE) of 40 at 150 mA and 10 V, it is suitable for amplification and switching functions. The transistor operates across a wide temperature range of -65°C to 200°C (TJ) and is qualified to MIL-PRF-19500/255, indicating its suitability for military and demanding industrial environments. This component finds application in aerospace, defense, and industrial control systems where robust performance and extended temperature operation are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |